| PART |
Description |
Maker |
| CM600HU-12F |
Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM200DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 200 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM300DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| STGWT40V60DF STGW40V60DF |
Trench gate field-stop IGBT, V series
|
STMicroelectronics
|
| GT10.DA120U |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
|
Vishay Siliconix
|
| STGW20IH125DF |
1250 V, 20 A IH series trench gate field-stop IGBT
|
ST Microelectronics
|
| STGW50H60DF |
50 A, 600 V field stop trench gate IGBT with Ultrafast diode
|
STMicroelectronics
ST Microelectronics
|
